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UPG2110TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2110TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UPG2110TB-E3

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2110TB-E3

Marking:G1Y;GaAs INTEGRATED CIRCUITS

FEATURES ?Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz ?Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) ?Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2110TB-E3-A

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    UPG2110TB

  • 功能描述:

    射頻放大器 L-Band PA Driver Amp

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 類型:

    Low Noise Amplifier

  • 工作頻率:

    2.3 GHz to 2.8 GHz

  • P1dB:

    18.5 dBm

  • 輸出截獲點(diǎn):

    37.5 dBm

  • 功率增益類型:

    32 dB

  • 噪聲系數(shù):

    0.85 dB

  • 工作電源電壓:

    5 V

  • 電源電流:

    125 mA

  • 測(cè)試頻率:

    2.6 GHz

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    QFN-16

  • 封裝:

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
SOT-363
10354
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NEC
2020+
SOT-363
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
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RENESAS
23+
SC70-6
63000
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NEC/REN
2020+
SOT-363
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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NEC
24+
SC70-6
9600
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NEC
23+
SOT-363
50000
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NEC
23+
NA/
30250
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
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NEC
22+
SOT-363
25000
只有原裝原裝,支持BOM配單
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NEC
23+
SC70-6
50000
原裝正品 支持實(shí)單
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更多UPG2110TB供應(yīng)商 更新時(shí)間2025-3-20 16:00:00