| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
UN2110 | Silicon PNP epitaxial planer transistor SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | |
SiliconPNPepitaxialplanartype SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
L-BANDPADRIVERAMPLIFIER DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz | CEL California Eastern Labs | CEL | ||
LINEARINTEGRATEDCIRCUIT | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
Finger-shapedheatsinkTO-126 | ASSMANN ASSMANN WSW COMPONENTS | ASSMANN | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
P-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda | SUTEX Supertex, Inc | SUTEX | ||
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda | SUTEX Supertex, Inc | SUTEX | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK | ||
WaterproofCircularConnectorsforSolderTerminationsMeetingIP67 | DDK DDK Ltd. | DDK |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+R
- 性質(zhì)：
表面帖裝型 （SMD）_數(shù)字電路用 （Digi）
- 封裝形式：
貼片封裝
- 極限工作電壓：
50V
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號(hào)：
FN1L4Z,DTA44TK,KSR2112,2SA1508,
- 最大耗散功率：
0.4W
- 放大倍數(shù)：
- 圖片代號(hào)：
H-15
- vtest：
50
- htest：
999900
- atest：
0.1
- wtest：
0.4
詳細(xì)參數(shù)
- 型號(hào)：
UN2110
- 制造商：
PANASONIC
- 制造商全稱：
Panasonic Semiconductor
- 功能描述：
Silicon PNP epitaxial planer transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
24+ |
23 |
2500 |
自己現(xiàn)貨 |
詢價(jià) | ||
UNAV |
2018+ |
SOT23 |
6528 |
承若只做進(jìn)口原裝正品假一賠十! |
詢價(jià) | ||
PANASONIC |
24+ |
SOT-23 |
25000 |
一級(jí)專營(yíng)品牌全新原裝熱賣 |
詢價(jià) | ||
SMD |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
Panasonic |
22+23+ |
Sot-23 |
34134 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
UNAV |
22+ |
SOT23 |
21762 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
Panasonic |
21+ |
SOT-23 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
UNAV |
22+ |
SOT23 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
PANASONIC |
21+ |
SOT-23 |
3000 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
UNAV |
21+ |
SOT-23 |
1062 |
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢! |
詢價(jià) |
