首頁 >IXTX24N100>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IXTX24N100 | N-Channel Enhancement Mode | IXYS IXYS Corporation | IXYS | |
SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Applications ?DC-DCconverters ?Batte | IXYS IXYS Corporation | IXYS | ||
HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features ?HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode ?ISOPLUSI4-PAC?highvoltagepackage -isolatedbacksurface -enlargedcree | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ? | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ? | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance | IXYS IXYS Corporation | IXYS | ||
HiPerFET-TMPowerMOSFET Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect | IXYS IXYS Corporation | IXYS | ||
HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET?PowerMOSFETISOPLUS247?(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacit | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance | IXYS IXYS Corporation | IXYS | ||
HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ? | IXYS IXYS Corporation | IXYS |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IXYS |
2018+ |
SMD |
1000 |
“芯達集團”專營軍工百分之百原裝進口 |
詢價 | ||
IXYS/艾賽斯 |
專業(yè)軍工 |
NA |
1000 |
只做原裝正品軍工級部分訂貨 |
詢價 | ||
IXYS |
三年內(nèi) |
1983 |
納立只做原裝正品13590203865 |
詢價 | |||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS/艾賽斯 |
專業(yè)軍工 |
NA |
1000 |
只做原裝正品 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
PLUS247 |
10000 |
公司只做原裝正品 |
詢價 | ||
IXYS |
22+ |
18 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | |||
IXYS/艾賽斯 |
21+ |
PLUS247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IXYS |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
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