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IXTY2N100P

N-Channel Enhancement Mode Avalanche Rated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTY2N100P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOD2N100

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOD2N100

1000V,2AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

FQD2N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):9Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD2N100

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N100TM

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU2N100

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU2N100

1000VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU2N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.6A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU2N100TU

N-ChannelQFET?MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXGP2N100

HighVoltageIGBT

IXYS

IXYS Corporation

IXGP2N100A

HighVoltageIGBT

IXYS

IXYS Corporation

IXTA2N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTA2N100

N-ChannelEnhancementModeAvalancheRated

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance(

IXYS

IXYS Corporation

IXTA2N100P

N-ChannelEnhancementModeAvalancheRated

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications:

IXYS

IXYS Corporation

IXTA2N100P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IXTY2N100P

  • 功能描述：

    MOSFET 2 Amps 1000V 7.5 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-252AA
30000
晶體管-分立半導體產品-原裝正品
 詢價
IXYS
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-252
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-252
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
TO-252
122999
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品，支持實單
 詢價
更多IXTY2N100P供應商 更新時間2024-10-27 14:14:00

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