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IXFT9N80Q

HiPerFET Power MOSFETs Q-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

9N80

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

9N80

9A,800VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

9N80

9Amps,800VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC9N80isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergy

UTCUnisonic Technologies

友順友順科技股份有限公司

9N80A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

HFP9N80

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFH9N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH9N80

HiPerFETPowerMOSFETs-N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fasti

IXYS

IXYS Corporation

IXFH9N80Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRatedLowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Corporation

SSFP9N80

StarMOSTPowerMOSFET

VDSS=800V ID25=7.5A RDS(ON)=1.2Ω Description StarMOSisanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimisestheJFETeffect,increasespackingdensityandreducestheon-resistance.StarMOSalsoachievesfaster switchings

Good-Ark

GOOD-ARK Electronics

詳細參數(shù)

  • 型號：

    IXFT9N80Q

  • 功能描述：

    MOSFET 9 Amps 800V 1.1W Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-268AA
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實單
 詢價
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
 詢價
更多IXFT9N80Q供應商 更新時間2025-2-19 20:46:00

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