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IXFV52N30PS

PolarHT Power MOSFET HiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFV52N30PS

Power MOSFETs

IXYS

IXYS Corporation

IXFC52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC52N30P

PolarHTTMHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFH52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFH52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFH52N30Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFK52N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFT52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFV52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFV52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTQ52N30P

PolarHTPowerMOSFET

Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

IXTQ52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTQ52N30P

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage-:VDSS=300V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) ?FastSwitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switch-ModeandResonant-ModePowerS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTT52N30P

N-ChannelEnhancementModePowerMOSFETs

IXYS

IXYS Corporation

IXTT52N30P

PolarHTPowerMOSFET

Polar?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switch-ModeandResonant-ModePowerSuppli

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IXFV52N30PS

  • 功能描述：

    MOSFET 52 Amps 300V 0.066 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
23+
PLUS220SMD
10186
全新原裝
 詢價(jià)
IXYS
22+
PLUS220SMD
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
21+
PLUS220SMD
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IXYS
23+
PLUS220SMD
9000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
2022+
PLUS-220SMD
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IXYS/艾賽斯
23+
PLUS220
10000
公司只做原裝正品
 詢價(jià)
IXYS
23+
TO-220-3
70781
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IXYS/艾賽斯
22+
PLUS220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
更多IXFV52N30PS供應(yīng)商 更新時(shí)間2024-11-2 14:02:00

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