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IS41LV16100-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16100-60TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

詳細參數(shù)

  • 型號：

    IS41LV16100-60

  • 制造商：

    ISSI

  • 制造商全稱：

    Integrated Silicon Solution, Inc

  • 功能描述：

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應商型號品牌批號封裝庫存備注價格
ISSI
24+
SOJ-42
4650
詢價
ISSI
2015+
DIP/SMD
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
ISSI
15
352
原裝正品
 詢價
ISSI
2022
SOJ
7000
全新原裝現(xiàn)貨
 詢價
2023+
3000
進口原裝現(xiàn)貨
 詢價
ISSI
23+
SOJ
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
ISSI
2023+
SOJ
50000
原裝現(xiàn)貨
 詢價
ISSI
22+
SOJ-42
20000
保證原裝正品,假一陪十
 詢價
ISSI
24+
9850
公司原裝現(xiàn)貨/隨時可以發(fā)貨
 詢價
ISSI
0109
100
公司優(yōu)勢庫存 熱賣中!
 詢價
更多IS41LV16100-60供應商 更新時間2025-1-16 16:06:00

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