首頁>IS41LV16100-60T>規(guī)格書詳情
IS41LV16100-60T中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多IS41LV16100-60T規(guī)格書詳情
DESCRIPTION
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.
FEATURES
? TTL compatible inputs and outputs; tristate I/O
? Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
— Self refresh Mode - 1,024 cycles / 128ms
? JEDEC standard pinout
? Single power supply:
— 5V ± 10 (IS41C16100)
— 3.3V ± 10 (IS41LV16100)
? Byte Write and Byte Read operation via two CAS
? Industrail Temperature Range -40oC to 85oC
? Lead-free available
產(chǎn)品屬性
- 型號:
IS41LV16100-60T
- 制造商:
ISSI
- 制造商全稱:
Integrated Silicon Solution, Inc
- 功能描述:
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ISSI |
1844+ |
TSOP44 |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ISSI |
21+ |
TSOP44 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
ISSI |
23+ |
TSOP44 |
10880 |
原裝正品,支持實單 |
詢價 | ||
ISSI |
2023+ |
TSOP |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
ISSI |
0423+ |
TSOP44 |
945 |
詢價 | |||
ISS |
23+ |
TSOP |
55254 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
ISSI |
2015+ |
DIP/SMD |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
INTEGRATEDSI |
05+ |
原廠原裝 |
13216 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ISSI |
24+ |
9850 |
公司原裝現(xiàn)貨/隨時可以發(fā)貨 |
詢價 | |||
ISSI |
23+ |
SOP |
9980 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 |