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IRLI2203NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRLI2203NPBF
廠商型號

IRLI2203NPBF

功能描述

HEXFET Power MOSFET

文件大小

1.61932 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-6 22:30:00

IRLI2203NPBF規(guī)格書詳情

VDSS = 30V R

DS(on) = 0.007?

ID = 61A

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Logic-Level Gate Drive

Advanced Process Technology

solated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

Lead-Free

產(chǎn)品屬性

  • 型號:

    IRLI2203NPBF

  • 功能描述:

    MOSFET MOSFT 30V 61A 7mOhm 73.3nC Log Lvl

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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I
2020+
TO-220F
80000
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IR
23+
NA/
93
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IR
22+
TO-220F
25000
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VB
TO-220F
68900
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IR
21+
TO-220
9852
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IR
24+
TO-220
46
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IR
24+
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720
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IR
24+
TO-220
35200
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IR
17+
TO-220F
6200
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IR
2023+
TO220-3
3550
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