IRLI2203中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLI2203規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Ultra Low On-Resistance
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Logic-Level Gate Drive
● RDS(on) Specified at VGS=5.0V & 10V
產(chǎn)品屬性
- 型號：
IRLI2203
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
I |
2020+ |
TO-220F |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
23+ |
NA/ |
5550 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
I |
22+ |
TO-220FP |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
VB |
TO-220F |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
23+ |
TO-220F |
35890 |
詢價 | |||
IR |
1948+ |
TO-220 |
18562 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
詢價 | |||
IR |
24+ |
TO-220F |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
17+ |
TO-220F |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 |
