IRLI2203G中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRLI2203G規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Ultra Low On-Resistance
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. = 4.8mm
● Logic-Level Gate Drive
● RDS(on) Specified at VGS=5.0V & 10V
產(chǎn)品屬性
- 型號(hào)：
IRLI2203G
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
164 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
IR |
24+ |
TO 220F |
161102 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
TO-220F |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
12+ |
TO-220F |
2300 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
IR |
1948+ |
TO-220 |
18562 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
IR |
23+ |
TO-220F |
35890 |
詢價(jià) | |||
IR |
TO-220F |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
詢價(jià) | |||
IR/VISHAY |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
IR |
23+ |
TO-220F |
7000 |
詢價(jià) |
