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IRL640PBF

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )

IRF

International Rectifier

IRL640PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640S

HEXFET-RPOWERMOSFET

IRF

International Rectifier

IRL640S

Repetitiveavalancherated

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640S

PowerMOSFETs

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640SPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRL640SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL640STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI640

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.9A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●IsolatedPackage ●HighVoltageIsolation=2.5KVRMS ●SinktoLeadCreepageDist.4.8mm ●

IRF

International Rectifier

IRLI640A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI640G

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.9A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●IsolatedPackage ●HighVoltageIsolation=2.5KVRMS ●SinktoLeadCreepageDist.4.8mm ●

IRF

International Rectifier

IRLI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI640G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI640GPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI640GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI640GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLS640A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.18Ω ID=9.8A FEATURES ●Logic-LevelGateDrive ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS640A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRL640PBF

  • 功能描述:

    MOSFET N-Chan 200V 17 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Vishay Siliconix
24+
TO-220AB
30000
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VISHAY/威世
24+
5549
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VISHAY
23+
TO-220-3
1000
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Vishay(威世)
2249+
61321
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VISHAY(威世)
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TO-220
7828
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VISHAY
2024+
N/A
70000
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VISHAY(威世)
23+
N/A
23500
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IR
23+
TO-220AB
19526
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IR
2015+
TO-220AB
19889
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VISHAY
23+
TO220AB
7750
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更多IRL640PBF供應(yīng)商 更新時(shí)間2025-1-9 10:12:00