零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFZ44V | 60A 60V N CHANNEL POWER MOSFET FEATURES ?LowONResistance ?LowGateCharge ?PeakCurrentvsPulseWidthCurve ?InductiveSwitchingCurves APPLICATION ?DCmotorcontrol ?UPS ?ClassDAmplifier | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | |
IRFZ44V | Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | |
IRFZ44V | N-CHANNEL Power MOSFET FEATURES ?LowONResistance ?LowGateCharge ?PeakCurrentvsPulseWidthCurve ?InductiveSwitchingCurves APPLICATION ?DCmotorcontrol ?UPS ?ClassDAmplifier | SUNTAC Suntac Electronic Corp. | SUNTAC | |
IRFZ44V | N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
Ultra Low On-Resistance Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
Advanced Process Technology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRFZ44V
- 制造商:
International Rectifier
- 功能描述:
MOSFET N TO-220
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
TO-220 |
20170 |
詢價(jià) | |||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2015+ |
TO-220 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
23+ |
TO-220 |
19526 |
詢價(jià) | |||
IR |
原廠原裝 |
2000 |
自己公司全新庫(kù)存絕對(duì)有貨 |
詢價(jià) | |||
IR |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
IR |
2016+ |
TO220F |
1000 |
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
IR |
23+ |
TO-220AB |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1450 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) |
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