首頁>IRFZ44VPBF>規(guī)格書詳情
IRFZ44VPBF中文資料KERSEMI數據手冊PDF規(guī)格書
IRFZ44VPBF規(guī)格書詳情
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Optimized for SMPS Applications
● Lead-Free
產品屬性
- 型號：
IRFZ44VPBF
- 功能描述：
MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
3395 |
原廠原裝正品 |
詢價 | ||
IR |
15+ |
TO220 |
2000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
12+13+ |
TO-220 |
516 |
只做原裝正品 |
詢價 | ||
IR/INFINEON |
2022+ |
TO-220 |
57550 |
詢價 | |||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY專營進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
22+ |
TO220 |
9000 |
原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
IR |
18+ |
TO-220 |
28000 |
主營IR可含稅只做全新原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
TO-220AB |
6000 |
原裝正品 |
詢價 | ||
IR |
2023+ |
SMD |
25780 |
全新原裝正品,優(yōu)勢價格 |
詢價 |
