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IRFI9630G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9630G

PowerMOSFET(Vdss=-200V,Rds(on)=0.80ohm,Id=-4.3A)

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFI9630G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9630GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9630GPBF

HEXFET?PowerMOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRFS9630

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10mA(Max.)@VDS=-200V ■LowRDS(ON):0.581Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

KAC-9630

KODAKKAC-9630CMOSIMAGESENSOR

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

LM9630

LM9630100x128,580fpsUltraSensitiveMonochromeCMOSImageSensor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM9630BIEA

LM9630100x128,580fpsUltraSensitiveMonochromeCMOSImageSensor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM9630EVAL-KIT

LM9630100x128,580fpsUltraSensitiveMonochromeCMOSImageSensor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM9630HEADBOARD

LM9630100x128,580fpsUltraSensitiveMonochromeCMOSImageSensor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

LM9630SAMPLE-KIT

LM9630100x128,580fpsUltraSensitiveMonochromeCMOSImageSensor

NSCNational Semiconductor (TI)

美國國家半導(dǎo)體美國國家半導(dǎo)體公司

PE9630

75OhmTNCFemaletoBNCMaleAdapter

PASTERNACK

Pasternack Enterprises, Inc.

SFI9630

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-200V ■LowRDS(ON):0.581Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFP9630

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:-10mA(Max.)@VDS=-200V ■LowRDS(ON):0.581Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFS9630

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10mA(Max.)@VDS=-200V ■LowRDS(ON):0.581Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFW9630

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=-200V ■LowRDS(ON):0.581Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFWI9630

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHF9630

PowerMOSFETS

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?P-Channel ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationof

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9630

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF9630STRRPBF

  • 功能描述：

    MOSFET P-Chan 200V 6.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IR
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IR
2022
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IR
22+
SOT263
6000
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IR
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68900
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IR
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IR
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1730
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多IRF9630STRRPBF供應(yīng)商 更新時間2025-1-17 11:00:00

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