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IRF9Z14STRRPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9Z14G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?175°Coperatingtemperature ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9Z14G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI9Z14G

HEXFET-RPOWERMOSFET

IRF

International Rectifier

IRFI9Z14GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SFP9Z14

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●175°COperetingTemperature ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:-10μA(Max.)@VDS=-60V ●LowRDS(ON):0.362?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFP9Z14

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFS9Z14

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SFS9Z14

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SFS9Z14

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●175°COperatingTemperature ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=-60V ●LowRDS(ON):0.362?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SFWI9Z14

AdvancedPowerMOSFET

BVDSS=-60V RDS(on)=0.5? ID=-6.7A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●175℃OperatingTemperature ●LowerLeakageCurrent:10μA(Max.)@VDS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SiHF9Z14

RepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SiHF9Z14

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14L

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount(IRF9Z14S,SiHF9Z14S) ?Low-profilethrough-hole(IRF9Z14L,SiHF9Z14L) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surface-mount(IRF9Z14S,SiHF9Z14S) ?Low-profilethrough-hole(IRF9Z14L,SiHF9Z14L) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF9Z14STL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFI9Z14G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRF9Z14STRR

  • 功能描述:

    MOSFET P-Chan 60V 6.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-263
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
詢價
IR
23+
TO-263
7000
詢價
IR
23+
TO-220AB
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
詢價
IR
23+
原廠原裝
3000
全新原裝
詢價
IR/VISHAY
23+
TO-220
43000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
IR/VISHAY
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
IR
06+
原廠原裝
6216
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
23+
TO-220
35890
詢價
三星
24+
TO-220
5000
只做原裝公司現(xiàn)貨
詢價
更多IRF9Z14STRR供應(yīng)商 更新時間2024-10-24 16:40:00