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IRF1310NPBF

HEXFET POWER MOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF1310NPBF_15

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NSPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1310S

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=41A)

VDSS=100V RDS(on)=0.04? ID=41A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310G

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=22A)

VDSS=100V RDS(on)=0.04? ID=22A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=24A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFI1310N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI1310NPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFI1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFI1310NPBF

HEXFET?PowerMOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFM1310ST

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

ISC-1310FB

Industrial1-portRS-232/422/485toFiberserialmediaconverter

ORING

ORing Industrial Networking Corp

ISC-1310FB-MM

Industrial1-portRS-232/422/485toFiberserialmediaconverter

ORING

ORing Industrial Networking Corp

ISC-1310FB-SS

Industrial1-portRS-232/422/485toFiberserialmediaconverter

ORING

ORing Industrial Networking Corp

詳細(xì)參數(shù)

  • 型號:

    IRF1310NPBF

  • 功能描述:

    MOSFET MOSFT 100V 42A 36mOhm 73.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價(jià)格優(yōu)勢
詢價(jià)
Infineon Technologies
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
IR
24+
TO-220
15000
全新原裝的現(xiàn)貨
詢價(jià)
IR
16+
TO-220
36000
原裝正品,優(yōu)勢庫存81
詢價(jià)
IR
23+
TO-220
65400
詢價(jià)
INFINEON/英飛凌
2021+
TO-220
18365
原裝進(jìn)口假一罰十
詢價(jià)
INFINEON/英飛凌
20+
TO-220
5000
進(jìn)口原裝支持含稅
詢價(jià)
INFINEON
22+
TO-220
12000
原裝正品!!!優(yōu)勢庫存!0755-83210901
詢價(jià)
IR/INFINEON
2122+
TO-220
8000
原裝正品,假一賠十!
詢價(jià)
INFINEON
23+
TO-220
10000
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更多IRF1310NPBF供應(yīng)商 更新時(shí)間2025-1-4 11:04:00