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IPD16CN10N

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD16CN10NG

OptiMOS2 Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD16CN10N-G

OptiMOS2 Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD16CN10NG

OptiMOS?2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI16CN10N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI16CN10NG

OptiMOS2Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI16CN10NG

OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI16CN10N-G

OptiMOS2Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP16CN10LG

OptiMOS2Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP16CN10N

OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP16CN10N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP16CN10NG

OptiMOS2Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP16CN10NG

OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP16CN10N-G

OptiMOS2Power-Transistor

Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IPD16CN10N

  • 功能描述:

    MOSFET OptiMOS 2 PWR TRANST 100V 53A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
23+
TO252-3
10000
公司只做原裝正品
詢價(jià)
Infineon/英飛凌
23+
20000
全新、原裝、現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
21+
DPAK(TO-252)
10000
公司原裝現(xiàn)貨,歡迎咨詢
詢價(jià)
INFINEON/英飛凌
22+
DPAK(TO-252)
32500
原裝
詢價(jià)
INFINEON/英飛凌
22+
DPAK(TO-252)
20000
原裝現(xiàn)貨,實(shí)單支持
詢價(jià)
ADI
23+
DPAK(TO-252)
8000
只做原裝現(xiàn)貨
詢價(jià)
ADI
23+
DPAK(TO-252)
7000
詢價(jià)
INFINEON/英飛凌
22+
TO252-3
90947
詢價(jià)
I
24+
TO-252
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
INFINEON
2012+
TO-252
12000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
更多IPD16CN10N供應(yīng)商 更新時(shí)間2024-11-1 14:30:00