首頁(yè) >IPI16CN10N>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IPI16CN10N | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
OptiMOS2 Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2 Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor | Infineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
OptiMOS?2Power-TransistorExcellentgatechargexRDS(on)product(FOM) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS2Power-Transistor Features N-channel,normallevel ?ExcellentgatechargexRos(on)product(FOM) ?Verylowon-resistanceRps(on) ?175°Coperatingtemperature ?Pb-freeleadplating:RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
IPI16CN10N
- 功能描述:
MOSFET N-CH 100V 53A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
TO262-3 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO262-3 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TO262-3 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO262-3 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
INFINEON |
23+ |
TO262-3 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO262-3 |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO262-3 |
93859 |
詢價(jià) | |||
INFINEON |
24+ |
I2PAK(TO-262) |
8866 |
詢價(jià) | |||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
23+ |
TO-262 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) |
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