首頁 >IKW30N60T>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IKW30N60T

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

LowLossDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime–5μs ?Designedfor: -FrequencyConverters -UninterruptiblePower

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW30N60T

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW30N60T_15

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW30N60TA

Designed for DC/AC converters for Automotive Application

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW30N60TAFKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH/FS 600V 60A TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKW30N60TFKSA1

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT TRENCH/FS 600V 60A TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFPS30N60K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS30N60K

SMPSMOSFET

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalanch

IRF

International Rectifier

IRFPS30N60KPBF

SMPSMOSFET

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●Lead-Free Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitan

IRF

International Rectifier

IXFA30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

IXFC30N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFC30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurr

IXYS

IXYS Corporation

IXFH30N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFH30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IKW30N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS DuoPack 600V 30A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
原裝
24+
標(biāo)準(zhǔn)
43494
熱賣原裝進口
 詢價
INFINEON
24+
TO-247
60000
原裝正品進口現(xiàn)貨
 詢價
INFINEON
14
TO-247
36000
自己庫存,原裝正品假一賠百0755-27210160田生
 詢價
INFINEON原裝正品專賣
23+
TO-247
33000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
INFINEON
23+
TO-247
20000
原裝正品,假一罰十
 詢價
INFINEON原裝
ROHS全新原裝
TO-247
21870
原裝進口價格好實需詳詢QQ350053121
 詢價
INFINEON
16+/17+
TO-247
3500
原裝正品現(xiàn)貨供應(yīng)56
 詢價
INFINEON
24+
TO-247
20000
英飛凌代理渠道,只做原裝QQ:2369405325
 詢價
INFINEON/英飛凌
2021+
TO-247
18226
原裝進口假一罰十
 詢價
INFINEON/英飛凌
1913+
TO-247
5763
超聲波設(shè)備/口罩機設(shè)備多種功率三極管原廠原裝正品
 詢價
更多IKW30N60T供應(yīng)商 更新時間2024-12-30 22:27:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多