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HV450WG

High-Voltage Ring Generator

GeneralDescription TheSupertexHV450isaPWMhighvoltageringgenerator.ThehighvoltageoutputP-andN-channeltransistorsarecontrolledindependentlybythelogicinputsPINandNIN.Forapplicationwhereasinglecontrolpin(NIN)isdesired,themodepinshouldbeconnectedtoGnd.Thi

SUTEX

Supertex, Inc

HWS450

GaAsDC-6GHzSPDTSwitch

Description TheHWS450isaGaAsPHEMTMMICSPDTswitchoperatingat0.5-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS450featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b

HWHexawave, Inc

漢威光電股份有限公司

IDSR450.X

ClassRK5FusesIDSRSeries

Description TheIDSRseriescombinesa600Vdccapabilitywithindicationtoprovideanidealsolutionformanydcapplications. Features&Benefits Excellentshort-circuitprotection-Improvesafetythroughfasterresponsetofaultcurrents Dual-elementdesign-Providesadvancedshortci

Littelfuselittelfuse

力特力特公司

IF450

450MHzMicroSphereAntenna

LSTD

Laird Tech Smart Technology

IRF450

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

iscN-ChannelMOSFETTransistor

DESCRIPTION ?13A,500V ?RDS(on)=0.4Ω ?SOAisPowerDissipationLimited ?LinearTransferCharacteristics ?RelatedLiterature APPLICATIONS ?Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF450

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF450

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFC450

HIGHVOLTAGEPOWERMOSFETDIE

IXYS

IXYS Corporation

IRFM450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM450

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale

IRF

International Rectifier

IRFM450

SimpleDriveRequirements

IRF

International Rectifier

IRFMA450

POWERMOSFETTHRU-HOLE(TablessTO-254AA)

IRF

International Rectifier

IRFMA450

SimpleDriveRequirements

IRF

International Rectifier

IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    HV450WG

  • 功能描述：

    電話振鈴器 SO-16 HV RING GEN

  • RoHS：

    否

  • 制造商：

    NJR

  • 產(chǎn)品：

    FSK Demodulator/Tone Decoder

  • 封裝/箱體：

    DIP-14

  • 頻率：

    0.01 Hz to 300 KHz

  • 最大工作溫度：

    + 85 C

  • 最小工作溫度：

    - 40 C

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ON
10+
DIP
7800
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
24+
2000
全新進(jìn)口原裝現(xiàn)貨熱賣!
 詢價(jià)
MICROCHIP/微芯
2406+
71260
誠信經(jīng)營!進(jìn)口原裝!量大價(jià)優(yōu)!
 詢價(jià)
HV
2023+
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
SUPERTEX
2023+環(huán)保現(xiàn)貨
標(biāo)準(zhǔn)封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
HV
23+
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HV
23+
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
SUPERTEXINC
24+
PLCC-44P
8
現(xiàn)貨
 詢價(jià)
SUPERTEX
05+
原廠原裝
4726
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
HI
16+
QFP
712
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢!
 詢價(jià)
更多HV450WG供應(yīng)商 更新時(shí)間2025-1-14 11:04:00

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