| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IF450 | 450 MHz MicroSphere Antenna | LSTD Laird Tech Smart Technology | LSTD | |
N-Channel Silicon Junction Field-Effect Transistor N-ChannelSiliconJunctionField-EffectTransistor ?Low-Noise,HighGainAmplifier | InterFET InterFET Corporation | InterFET | ||
N-Channel Silicon Junction Field-Effect Transistor N-ChannelSiliconJunctionField-EffectTransistor ?Low-Noise,HighGainAmplifier | InterFET InterFET Corporation | InterFET | ||
450 MHz MicroSphere Antenna | LSTD Laird Tech Smart Technology | LSTD | ||
包裝：散裝 類(lèi)別：RF/IF，射頻/中頻和 RFID RF 天線(xiàn) 描述：RF ANT 450MHZ PANEL SMA FEM CHAS | TE Connectivity Laird TE Connectivity Laird | TE Connectivity Laird | ||
TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
13A,500V,0.400Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?13A,500V ?RDS(on)=0.4Ω ?SOAisPowerDissipationLimited ?LinearTransferCharacteristics ?RelatedLiterature APPLICATIONS ?Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
N-CHANNEPOWERMOSFETS FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HIGHVOLTAGEPOWERMOSFETDIE | IXYS IXYS Corporation | IXYS | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TablessTO-254AA) | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號(hào)：
IF450
- 制造商：
INTERFET
- 制造商全稱(chēng)：
INTERFET
- 功能描述：
N-Channel Silicon Junction Field-Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
LAIRD |
20+ |
射頻元件 |
155 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
XP |
2021+ |
DIP |
11000 |
十年專(zhuān)營(yíng)原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) | ||
XP |
23+ |
DIP |
17035 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- IF4500
- IF4510
- IF4550-632-A-7
- IF4636-1032-A-6
- IF48-8.0
- IF5-25/OVP
- IF-53883
- IF-540
- IF-545
- IF5645
- IF602SS-198XL
- IF602SS-396XL
- IF602VE-126Z
- IF602VE-252Z
- IF610-126
- IF610-252
- IF610-504XL
- IF610SS-792
- IF-6-12
- IF-6-20
- IF-6-24
- IF632
- IF635-6-0
- IF-636-0-5
- IF-636-15-0
- IF-636-4-0
- IF-6-40
- IF-6-56
- IF-810065
- IF-810075
- IF-810082
- IF-810087
- IF-810089
- IF886
- IF9001-01S-E
- IF9001-03S-E
- IF9520NLPBF
- IF-ACR
- IF-AM2
- IFB3Z1A200
- IFB3Z1A600
- IFB3Z1AD200
- IFB3Z1AD300
- IFB3Z1AD600
- IFC-0603
相關(guān)庫(kù)存
更多- IF4501
- IF4511
- IF-4-56
- IF48-8
- IF-508
- IF-527
- IF-53884
- IF-543
- IF-562
- IF602SS-198R
- IF602SS-396R
- IF602VE-126
- IF602VE-252
- IF-6-10
- IF610-126XL
- IF610-504
- IF610SS-396XL
- IF610SS-792XL
- IF-6-16
- IF-6-230
- IF-6-30
- IF-6-34
- IF-636-0-1
- IF-636-1-0
- IF-636-3-0
- IF-639-50-0
- IF654
- IF658
- IF-810070
- IF-810080
- IF-810085
- IF-810088
- IF-810090
- IF9001-01P-E
- IF9001-01U-E
- IF9030
- IFA3P
- IF-AM1
- IF-AM3
- IFB3Z1A300
- IFB3Z1AD100
- IFB3Z1AD220
- IFB3Z1AD500
- IFB3Z1AD7/100
- IFC-06031.8NH16.7%T/R
