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HWS450

GaAs DC-6 GHz SPDT Switch

Description TheHWS450isaGaAsPHEMTMMICSPDTswitchoperatingat0.5-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS450featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b

HWHexawave, Inc

漢威光電股份有限公司

HWS450_V8_15

GaAs 0.5-6GHz DPDT Switch

Description TheHWS450isaGaAsPHEMTMMICSPDTswitchoperatingat0.5-6GHzinalowcostminiatureQFN12L(3x3mm)plasticlead(Pb)freepackage.TheHWS450featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinWiMAXorIEEE802.11a/b

HWHexawave, Inc

漢威光電股份有限公司

IDSR450.X

ClassRK5FusesIDSRSeries

Description TheIDSRseriescombinesa600Vdccapabilitywithindicationtoprovideanidealsolutionformanydcapplications. Features&Benefits Excellentshort-circuitprotection-Improvesafetythroughfasterresponsetofaultcurrents Dual-elementdesign-Providesadvancedshortci

Littelfuselittelfuse

力特力特公司

IF450

450MHzMicroSphereAntenna

LSTD

Laird Tech Smart Technology

IRF450

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

iscN-ChannelMOSFETTransistor

DESCRIPTION ?13A,500V ?RDS(on)=0.4Ω ?SOAisPowerDissipationLimited ?LinearTransferCharacteristics ?RelatedLiterature APPLICATIONS ?Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF450

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF450

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFC450

HIGHVOLTAGEPOWERMOSFETDIE

IXYS

IXYS Corporation

IRFM450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM450

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale

IRF

International Rectifier

IRFM450

SimpleDriveRequirements

IRF

International Rectifier

IRFMA450

POWERMOSFETTHRU-HOLE(TablessTO-254AA)

IRF

International Rectifier

IRFMA450

SimpleDriveRequirements

IRF

International Rectifier

IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    HWS450

  • 制造商：

    HW

  • 制造商全稱(chēng)：

    HW

  • 功能描述：

    GaAs DC-6 GHz SPDT Switch

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HEXAWAVE
13+
QFN12L
37750
原裝分銷(xiāo)
 詢(xún)價(jià)
HEXAWAVE
23+
QFN
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún)
 詢(xún)價(jià)
HEXAWAVE
09+
QFN
8320
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún)
 詢(xún)價(jià)
HEXAWAVE
23+
QFN-12
999999
原裝正品現(xiàn)貨量大可訂貨
 詢(xún)價(jià)
HEXAWAVE
23+
QFN-12
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
HEXAWAVE
23+
QFN
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售
 詢(xún)價(jià)
HEXWAVE
16+
2397
公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!
 詢(xún)價(jià)
HEXAWAVE
22+
QFN12L
50000
只做原裝正品,假一罰十,歡迎咨詢(xún)
 詢(xún)價(jià)
HEXAWAVE
06+
QFN
1177
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
HEXAWAVE
QFN
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
更多HWS450供應(yīng)商 更新時(shí)間2025-1-14 9:00:00

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