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IDSR450.X

Class RK5 Fuses IDSR Series

Description TheIDSRseriescombinesa600Vdccapabilitywithindicationtoprovideanidealsolutionformanydcapplications. Features&Benefits Excellentshort-circuitprotection-Improvesafetythroughfasterresponsetofaultcurrents Dual-elementdesign-Providesadvancedshortci

Littelfuselittelfuse

力特力特公司

IF450

450MHzMicroSphereAntenna

LSTD

Laird Tech Smart Technology

IRF450

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=0.400ohm,Id=12A)

TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF450

13A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF450

iscN-ChannelMOSFETTransistor

DESCRIPTION ?13A,500V ?RDS(on)=0.4Ω ?SOAisPowerDissipationLimited ?LinearTransferCharacteristics ?RelatedLiterature APPLICATIONS ?Designedforapplicationssuchasswitchingregulators, switchingconvertors,motordrivers,relaydriver,anddrivers forhighpowerbipola

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF450

N-ChannelPowerMOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrol,circuitsUPSandgeneralpurposeswitchingapplications. TheNellIRF450isathree-terminalsilicondevicewithcurrentconductioncapabilityof14A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF450

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFC450

HIGHVOLTAGEPOWERMOSFETDIE

IXYS

IXYS Corporation

IRFM450

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM450

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySeale

IRF

International Rectifier

IRFM450

SimpleDriveRequirements

IRF

International Rectifier

IRFMA450

POWERMOSFETTHRU-HOLE(TablessTO-254AA)

IRF

International Rectifier

IRFMA450

SimpleDriveRequirements

IRF

International Rectifier

IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

SimpleDriveRequirements

IRF

International Rectifier

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Littelfuse(美國力特)
23+
7350
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SAMTEC
24+
con
35960
查現(xiàn)貨到京北通宇商城
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SAMTEC/申泰
23+
www.x07.cn
35078
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SAMTEC
24+
con
2500
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SAMTEC
110
全新原裝 貨期兩周
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SAMTEC
24+
con
10000
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SAMTEC
07/14/10
2
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更多IDSR450.X供應(yīng)商 更新時(shí)間2025-1-14 16:11:00