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BFP181W

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP181W

NPN Silicon RF Transistor

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR181

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Pb-free(RoHScompliant)package ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181T

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ?Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181T

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TF

SiliconNPNPlanarRFTransistor

Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181TW

SiliconNPNPlanarRFTransistor

Features ?Lownoisefigure ?Highpowergain Applications ??Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BFR181W

NPNSiliconRFTransistor)Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA)

NPNSiliconRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.45dBat900MHz

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFR181W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    BFP181W

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    NPN Silicon RF Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
SOT-343
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
INFINEON
2023+
SOT-343
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
SIE
23+
SMD
5177
現(xiàn)貨
詢價
INFINEON
22+
SOT-343
8000
終端可免費供樣,支持BOM配單
詢價
INFINEON
23+
SOT-343
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
SOT-343
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
INFINEON
23+
SOT-343
7000
詢價
INFINEON/英飛凌
23+
SOT-143
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
INFINEON/英飛凌
2022
SOT-143
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
更多BFP181W供應(yīng)商 更新時間2024-12-28 9:02:00