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BFP196W

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPNSiliconRFTransistor ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz F=1.5dBat900MHz

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFP196W

NPN Silicon RF Transistor

NPNSiliconRFTransistor* ?Forlownoise,lowdistortionbroadband amplifiersinantennaandtelecommunications systemsupto1.5GHzatcollectorcurrentsfrom 20mAto80mA ?PoweramplifierforDECTandPCNsystems ?fT=7.5GHz,F=1.3dBat900MHz ?Pb-free(RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W

isc Silicon NPN RF Transistor

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP. @VCE=6V,IC=5mA,f=1GHz ?HighGain ︱S21︱2=18dBTYP. @VCE=6V,IC=30mA,f=1GHz ?MinimumLot-to-Lotvariationsforrobust deviceperformanceandreliableoperation APPLICATIONS ?Designedforuseinlownoise

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFP196W

NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196WN

Low noise silicon bipolar RF transistor

Productdescription ?NPNsiliconplanarepitaxialtransistorin4-pindual-emitterSOT343packageforlownoiseandlowdistortionwidebandamplifiers.ThisRFtransistorbenefitsfromInfineonlong-termexperienceinRFcomponentsandcombinesease-of-usetostablevolumesproduction,atbenchm

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W_07

NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196W_14

Low Noise Silicon Bipolar RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP196WNH6327XTSA1

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:SC-82A,SOT-343 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻 描述:RF TRANS NPN 12V 7.5GHZ SOT343-4

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductorForlownoise,highgainamplifiersupto2GHz.)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6.5GHz,F=3dBat2GHz ?ESAQualificationpending

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

BFY196

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY196S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainamplifiersupto2GHz. ?Forlinearbroadbandamplifiers ?Hermeticallysealedmicrowavepackage ?fT=6,5GHz F=3dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.No.:5

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CGY196

GaAsMMIC(BroadbandPowerAmplifier[800..3500Mhz]DECT,PHS,PCS,GSM,AMPS,WLAN,WLLSingleVoltageSupply)

GaAsMMIC ●BroadbandPowerAmplifier[800..3500Mhz] ●DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ●SingleVoltageSupply ●Operatingvoltagerange:2.0to6V ●Pout=25.5dBmatVd=2.4V ●Pout=27.0dBmatVd=3.0V ●Pout=30.0dBmatVd=5.0V ●Overallpoweraddedefficiencyupto50 ●Easyexter

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

CL-196

ULTRASMALLCHIPLEDSFORUSEINVARIOUSELECTRONICPRODUCTS

ETCList of Unclassifed Manufacturers

未分類制造商

CL-196

Mono-ColorUpward-LightingType

Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors.

CITIZENCitizen Electronics Co., Ltd

西鐵城電子株式會(huì)社

CL-196D

Mono-ColorUpward-LightingType

Mono-ColorUpward-LightingType ●CompactchipLEDeventhinnerthanCL-190(0.8mmthick). Pleasecontactusatthetimeoforderforthelineupofluminescentcolors.

CITIZENCitizen Electronics Co., Ltd

西鐵城電子株式會(huì)社

CL-196D

Mono-ColorUpward-LightingType

CITIZENCitizen Electronics Co., Ltd

西鐵城電子株式會(huì)社

晶體管資料

  • 型號(hào):

    BFP196W

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    表面帖裝型 (SMD)_超高頻/特高頻 (UHF)_寬頻帶

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    8GHZ

  • 引腳數(shù):

    4

  • 可代換的型號(hào):

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號(hào):

    H-17

  • vtest:

    20

  • htest:

    8000000000

  • atest:

    0.1

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號(hào):

    BFP196W

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    Transistor, NPN, RF 7.5GHz, BFP196W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
SOT343
36500
全新原裝現(xiàn)貨,假一罰十!
詢價(jià)
INFINEON
19+
SOT343
6000
原裝現(xiàn)貨,特價(jià)供應(yīng)
詢價(jià)
Infineon(英飛凌)
23+
標(biāo)準(zhǔn)封裝
9376
原廠渠道供應(yīng),大量現(xiàn)貨,原型號(hào)開(kāi)票。
詢價(jià)
INFINEON
23+
SOT343R
21000
原裝現(xiàn)貨特價(jià)熱銷
詢價(jià)
INFINEON
16+/17+
SOT-343
3500
原裝正品現(xiàn)貨供應(yīng)56
詢價(jià)
INFINEON/英飛凌
24+
SOT-343
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
INFINEO
22+
SOT343
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
INFINEON/英飛凌
20+
SOT343
120000
原裝正品 可含稅交易
詢價(jià)
INFINEON/英飛凌
23+
SOT343
33500
全新進(jìn)口原裝現(xiàn)貨,假一罰十
詢價(jià)
更多BFP196W供應(yīng)商 更新時(shí)間2024-12-27 17:03:00