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TSDS2110S

TimeDelayRelays-Dedicated-SingleShot

Description TheTSDSSeriesisdesignedformoredemandingcommercial andindustrialapplicationswheresmallsizeandaccurate performancearerequired.Thefactorycalibrationforfixed timedelaysiswithin1ofthetargettimedelay.Therepeat accuracy,understableconditions,is0.5of

Littelfuselittelfuse

力特力特公司

UM2110

ATTENUATORANDPOWERPINDIODES2??30MHz

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110

PINDIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UM2110B

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UM2110C

ProductChangeNotification

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

UN2110

SiliconPNPepitaxialplanertransistor

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UNR2110

SiliconPNPepitaxialplanartype

SiliconPNPepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Minitypepackageallowingeasyautomaticinsertionthroughtape packingandmagazinepacking

PanasonicPanasonic Semiconductor

松下松下電器

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheμPG2106TBandμPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheμPG2106TBis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2110TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2110TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES ?LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V, fRF=1850to1910MHz

CEL

California Eastern Labs

UTCM2110

LINEARINTEGRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

V2110B

Finger-shapedheatsinkTO-126

ASSMANN

ASSMANN WSW COMPONENTS

VDA2110CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2110NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VN2110

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN2110ND

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2110isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

VP2110

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

VP2110ND

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

SUTEX

Supertex, Inc

WEBR2110FXGS-D

WaterproofCircularConnectorsforSolderTerminationsMeetingIP67

DDK

DDK Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    TQL2110

  • 制造商:

    GECO

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PANASONIC/松下
23+
DIP
11200
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TriQint
24+
DFN2015-6
2570
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TOSHIBA
23+
SOT363
5000
原裝正品,假一罰十
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TRIQUINT
23+
BGA
12000
全新原裝優(yōu)勢(shì)
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TRIQUINT
638
原裝正品
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TRIQUINT
23+
SMD
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
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TRIQUINT
23+
QFN20
50000
全新原裝正品現(xiàn)貨,支持訂貨
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TRIQUINT
23+
QFN20
50000
全新原裝正品現(xiàn)貨,支持訂貨
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TRIQINT
23+
DFN2015-
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售!
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TRIQUIN
12+
SMD
823
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更多TQL2110供應(yīng)商 更新時(shí)間2025-1-1 11:10:00