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80N10

N-Channel100-V(D-S)175?CMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

80N10L

N-Channel100-V(D-S)175?CMOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

BR80N10

N-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

BR80N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

BRB80N10

N-CHANNELMOSFETinaTO-263PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

DTP80N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

HMS80N10KA

N-ChannelSuperTrenchPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFC80N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC80N10

HiPerFETTMMOSFETISOPLUS220

HiPerFET?MOSFETISOPLUS220? ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFH80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXYS

IXYS Corporation

IXFH80N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH80N10Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXFT80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXYS

IXYS Corporation

IXFT80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXTA80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

IXTA80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

IXTP80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JCS80N10CF-O-C-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    TD80N10KOF-A

  • 功能描述：

    THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|80A I(T)

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TOS
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更多TD80N10KOF-A供應(yīng)商 更新時(shí)間2025-1-13 18:30:00

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