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IXFH80N10

HiPerFET Power MOSFETs

VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXYS

IXYS Corporation

IXFH80N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH80N10Q

HiPerFET Power MOSFETs Q-Class

VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXFH80N10Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT80N10

HiPerFETPowerMOSFETs

VDSS=100V ID25=80A RDS(on)=12.5m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit

IXYS

IXYS Corporation

IXFT80N10Q

HiPerFETPowerMOSFETsQ-Class

VDSS=100V ID25=80A RDS(on)=15m? trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?IXYSadvancedlowgatechargeprocess ?Internationalstandardpackages ?Lowgatechargeandcapacitance -ea

IXYS

IXYS Corporation

IXTA80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

IXTA80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP80N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP80N10T

TrenchMVTMPowerMOSFET

VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on)

IXYS

IXYS Corporation

JCS80N10CF-O-C-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS80N10F

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS80N10FF-O-F-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS80N10SF-O-S-N-A

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS80N10SF-O-S-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS80N10WF-O-W-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MC80N10A

N-CHANNELMOSFET

APPLICATIONS ?IsolatedDC/DC ConvertersinTelecomand Industrial ?SynchronousRectification inDC/DCandAC/DC Converters FEATURES ?TrenchPowerMOSFET Technology ?LowRDS(ON) ?Lowgatecharge ?Fast-switching

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MC80N10A

N-CHANNELMOSFET

APPLICATIONS ?IsolatedDC/DC ConvertersinTelecomand Industrial ?SynchronousRectification inDC/DCandAC/DC Converters FEATURES ?TrenchPowerMOSFET Technology ?LowRDS(ON) ?Lowgatecharge ?Fast-switching

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MC80N10A

N-CHANNELMOSFET

APPLICATIONS ?IsolatedDC/DC ConvertersinTelecomand Industrial ?SynchronousRectification inDC/DCandAC/DC Converters FEATURES ?TrenchPowerMOSFET Technology ?LowRDS(ON) ?Lowgatecharge ?Fast-switching

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MC80N10A-I-B

N-CHANNELMOSFET

APPLICATIONS ?IsolatedDC/DC ConvertersinTelecomand Industrial ?SynchronousRectification inDC/DCandAC/DC Converters FEATURES ?TrenchPowerMOSFET Technology ?LowRDS(ON) ?Lowgatecharge ?Fast-switching

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IXFH80N10

  • 功能描述:

    MOSFET 80 Amps 100V 0.125 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXY
05+
TO-247
2000
原裝進(jìn)口
詢價(jià)
IXSY
23+
3P
1871
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IXYS
20+
TO-247
36900
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
詢價(jià)
IXYS
24+
TO-247
548
詢價(jià)
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
IXYS/艾賽斯
23+
TO-247
6530
公司只做原裝正品
詢價(jià)
IXYS/艾賽斯
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
更多IXFH80N10供應(yīng)商 更新時(shí)間2025-1-9 17:52:00