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STW26NM60

N-CHANNEL 600V - 0.125ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET

DESCRIPTION TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW26NM60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW26NM60N

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

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STW26NM60ND

Low input capacitance and gate charge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

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STW26NM60N-H

Marking：26NM60N；Package：TO-247；N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh? II Power MOSFET

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description Thisseriesofdevicesimplementssecond generationMDmesh?technology.This revolutionaryPowerMOSFETassociatesanew verticalstruc

STMICROELECTRONICSSTMicroelectronics

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STW26NM60N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW26NM60ND

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

26NM60N

N-channel600V,0.160廓,19APowerFLAT??8x8HVultralowgatechargeMDmesh??IIPowerMOSFET

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STMICROELECTRONICSSTMicroelectronics

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STB26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB26NM60N

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    STW26NM60

  • 功能描述：

    MOSFET N-Ch 600 Volt 30 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ST
23+
TO-247
20000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
2016+
TO-3P
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
ST
23+
TO-247
9526
詢價
ST
17+
TO-247
6200
詢價
ST
24+
TO-247-3
760
詢價
ST
05+
原廠原裝
10051
只做全新原裝真實現(xiàn)貨供應
 詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
 詢價
ST
24+
TO-247-3
760
原裝現(xiàn)貨假一罰十
 詢價
ST
16+
SMD
12000
全新原裝現(xiàn)貨
 詢價
ST
23+
TO-247
50000
原裝正品,假一罰十
 詢價
更多STW26NM60供應商 更新時間2025-4-10 11:10:00

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