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STW28N60M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW28N60M2

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh? M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF28N60M2

N-channel600V,0.135typ.,22AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAKFPpackages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI28N60M2

N-channel600V,0.135typ.,22AMDmeshIIPluslowQgPowerMOSFETsinTO-220FP,I2PAKFPpackages

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STI28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL28N60M2

N-channel600V,0.140typ.,19AMDmeshTMM2PowerMOSFETinaPowerFLATTM8x8HVpackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimprovedvertical structure,thedevi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP28N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP28N60M2

N-channel600V,0.135Ωtyp.,22AMDmesh?M2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100%avalanchetested ?Zener-protected Applications ?Switchingapplications ?LCCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh?M

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STW28N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    STW28N60M2 - Trays

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMicroelectronics
24+
TO-247-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
STM
21+
TO-247-3
1860
原裝正品 有掛有貨
 詢價(jià)
ST
24+
TO-247
6180
原裝現(xiàn)貨,有上庫存就有貨,假一賠十
 詢價(jià)
ST(意法半導(dǎo)體)
23+
TO-247
8216
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ST
2020+
TO-247
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
ST
24+
35200
一級(jí)代理/放心采購
 詢價(jià)
ST/意法
23+
NA
12730
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
ST(意法半導(dǎo)體)
2112+
TO-247
105000
600個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期
 詢價(jià)
ST
21+
TO-247
276
原裝現(xiàn)貨假一賠十
 詢價(jià)
更多STW28N60M2供應(yīng)商 更新時(shí)間2025-1-16 17:17:00

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