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STB26NM60N

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB26NM60N

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STB26NM60ND

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=21A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=175mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB26NM60ND

Low input capacitance and gate charge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF26NM60N

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STF26NM60N

N-channel600V,0.135ohmtyp.,20AMDmeshIIPowerMOSFETinD2PAK,I2PAK,TO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF26NM60N

iscN-ChannelMOSFETTransistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF26NM60ND

Lowinputcapacitanceandgatecharge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF26NM60N-H

N-channel600V,0.135??20AMDmesh??IIPowerMOSFETinTO-220FP

Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STFI26NM60N

N-channel600V,0.135,20AMDmeshIIPowerMOSFETinPAKFPpackage

ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationof MDmesh?technology. ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

詳細參數(shù)

  • 型號：

    STB26NM60N

  • 功能描述：

    MOSFET POWER MOSFET N-CH 600V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
原廠原包
24+
原裝
38560
原裝進口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
 詢價
ST(意法)
24+
D2PAK
4000
原裝原廠代理 可免費送樣品
 詢價
ST/意法半導(dǎo)體
22+
TO-263-3
6008
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
STMicroelectronics
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
ST
16+
10000
原裝正品
 詢價
ST
20+
D2PAK
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
STMicroelectronics
21+
D2PAK
1000
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
 詢價
ST/意法
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
ST/意法
23+
NA
12730
原裝正品代理渠道價格優(yōu)勢
 詢價
STM原廠目錄
24+
D2PAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
更多STB26NM60N供應(yīng)商 更新時間2025-3-10 12:00:00

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