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STB36NM60ND

Marking:36NM60ND;Package:D2PAK;Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60N

Automotive-gradeN-channel600V,0.093Ω,29A,MDmesh?IIPowerMOSFETinaD2PAKpackage

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60N

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60N

N-channel600V,0.092Ω,29A,MDmesh?IIPowerMOSFETinTO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60ND

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=29A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STW36NM60ND

Automotive-gradeN-channel600V,0.097typ.,29AFDmeshII

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    STB36NM60ND

  • 制造商:

    STMicroelectronics

  • 功能描述:

    POWER MOSFET - Tape and Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STM
23+
D2PAK
2000
原裝現(xiàn)貨支持送檢
詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
詢價(jià)
STMicroelectronics
21+
D2PAK
1000
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!!
詢價(jià)
ST(意法半導(dǎo)體)
2447
D2PAK
105000
1000個(gè)/圓盤(pán)一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
詢價(jià)
STM
1809+
TO-263
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
ST/意法半導(dǎo)體
21+
TO-263-3
6000
原裝現(xiàn)貨
詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷(xiāo)經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
ST/意法半導(dǎo)體
23+
TO-263-3
6900
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
更多STB36NM60ND供應(yīng)商 更新時(shí)間2025-3-3 15:13:00