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STW18N60M2

Low gate input resistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW18N60M2

Marking：18N60M2；Package：TO-247；N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB18N60M2

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STB18N60M2

N-channel600V,0.255Ωtyp.,13AMDmeshM2PowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Application ?Switchingapplications ?LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB18N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF18N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencycon

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF18N60M2

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STFH18N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFU18N60M2

N-channel600V,0.255typ.,13AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-247-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ST/意法半導體
22+
TO-247-3
6005
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST/意法半導體
2023
TO-247-3
6000
公司原裝現(xiàn)貨/支持實單
 詢價
ST(意法半導體)
23+
TO-247
8216
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
23+/24+
TO-247
9865
原裝MOS管(場效應管).
 詢價
KEC
23+
TO-220F
69820
終端可以免費供樣,支持BOM配單!
 詢價
ST(意法半導體)
1921+
TO-247-3
3575
向鴻倉庫現(xiàn)貨,優(yōu)勢絕對的原裝!
 詢價
ST(意法半導體)
2447
TO-247-3
315000
600個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
STM
1809+
TO-247
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST(意法半導體)
2021+
TO-247-3
499
詢價
更多STW18N60M2供應商 更新時間2025-3-12 10:11:00

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