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STW11NM80

N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STW11NM80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STW11NM80

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STW11NM80

N-channel 800 V - 0.35 廓 - 11 A - TO-220/FP- D2PAK - TO-247 MDmesh??Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STW11NM80

N-channel 800 V, 0.35 廓, 11 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, TO-247

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

F11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

I11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

P11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB11NM80

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB11NM80

N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB11NM80

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STB11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF11NM80

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STF11NM80

N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STF11NM80

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STF11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STI11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

STP11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    STW11NM80

  • 功能描述：

    MOSFET N-Ch 800 Volt 11 Amp Power MDmesh

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-247-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ST
2020+
TO247
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST/意法
21+
TO-247
6000
原裝正品
 詢價
ST/意法
24+
TO-247-3
173
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
ST
23+
TO-247
63200
一級分銷商
 詢價
ST
24+
TO-247
7840
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
ST專家
2021+
TO-247
6800
原廠原裝,歡迎咨詢
 詢價
ST
2024+
TO-247-3
32560
原裝優(yōu)勢絕對有貨
 詢價
ST(意法半導體)
23+
TO-247
8216
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
23+/24+
TO-247-3
9865
優(yōu)勢庫存.原裝正品.終端BOM表可配單
 詢價
更多STW11NM80供應商 更新時間2024-10-24 20:37:00

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