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STP13NM60ND

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STP13NM60ND

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

13NM60

13A,600VN-CHANNELSUPER-JUNCTIONMOSFET

?DESCRIPTION TheUTC13NM60isaSuperJunctionMOSFETStructure andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceanda highruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedatAC-DCconvertersforpower

UTCUnisonic Technologies

友順友順科技股份有限公司

13NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

13NM60N

N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STB13NM60N

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STB13NM60N

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STB13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STB13NM60ND

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60N

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD13NM60N

N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STD13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60ND

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STD13NM60ND

N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STF13NM60N

N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STF13NM60N

N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STF13NM60N

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STF13NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF13NM60ND

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

STF13NM60ND

N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    STP13NM60ND

  • 制造商:

    STMicroelectronics

  • 功能描述:

    POWER MOSFET - Rail/Tube

  • 功能描述:

    MOSFET N-CH 600V 11A TO-220

  • 功能描述:

    STP13NM60ND Series N-Channel 600V 380mOhm FDmesh II Plus Power Mosfet - TO-220-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
STMICRO
2405+
原廠封裝
8900
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐
詢價(jià)
STM
21+
TO-220
3000
原裝正品 有掛有貨
詢價(jià)
STM
19+
3000
TO-220
詢價(jià)
ST/意法半導(dǎo)體
22+
TO-220-3
6007
原裝正品現(xiàn)貨 可開增值稅發(fā)票
詢價(jià)
STM
23+
TO-220
3000
原裝現(xiàn)貨支持送檢
詢價(jià)
ST(意法半導(dǎo)體)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
STMicroelectronics
18+
NA
3899
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
ST
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
更多STP13NM60ND供應(yīng)商 更新時(shí)間2024-10-22 19:41:00