首頁 >STD13NM60ND>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD13NM60ND | N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | |
STD13NM60ND | isc N-Channel Mosfet Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.28廓typ.,11AMDmesh??IIPowerMOSFETinTO-220FP,I?PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinTO-220FP | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.28廓,11AMDmesh??IIPowerMOSFETinI?PAKFPpackage Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max) ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.320廓,10APowerFLAT??(8x8)HVMDmesh??IIPowerMOSFET Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitabl | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.32typ.,11A,FDmeshIIPowerMOSFET(withfastdiode)inDPAK Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel600V,0.28ohmtyp.,11AMDmeshIIPowerMOSFETinTO-220FP,I2PAK,TO-220,IPAK,TO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC |
詳細參數
- 型號：
STD13NM60ND
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Tape and Reel
- 功能描述：
MOSFET N-CH 600V 11A DPAK
- 功能描述：
STD13NM60ND Series N-Channel 600 V 0.38 Ohm SMT FDmesh II Power Mosfet - DPAK
- 功能描述：
MOSFET N-CH 600V 0.32Ohm 11A MDmesh II Plus
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法半導體) |
23+ |
TO-252 |
9555 |
支持大陸交貨,美金交易。原裝現貨庫存。 |
詢價 | ||
ST |
2024+ |
N/A |
70000 |
柒號只做原裝 現貨價秒殺全網 |
詢價 | ||
STMicroelectronics |
18+ |
NA |
3680 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
ST原裝 |
22+23+ |
TO-251 |
23217 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
ST原裝 |
19+ |
TO-251 |
9860 |
一級代理 |
詢價 | ||
ST |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
STMicroelectronics |
21+ |
DPAK |
2500 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營)! |
詢價 | ||
STM |
21+ |
TO252 |
2857 |
原裝現貨假一賠十 |
詢價 | ||
STM |
1809+ |
TO-252 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
STM |
22+ |
TO252 |
28600 |
只做原裝正品現貨假一賠十一級代理 |
詢價 |
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