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STGD3HF60HDT4

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description Thesedevicesarebasedonanewadvanced planartechnologyconcepttoyieldanIGBTwith morestableswitchingperformance(Eoff)versus temperature,aswellaslowerconductionlosses. Features ?Minimaltailcurrent ?Lowconductionandswitchinglosses ?Ultrafastsoftre

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD3HF60HDT4

4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■Minimaltailcurrent ■Lowconductionandswitchinglosses ■Ultrafastsoftrecoveryantiparalleldiode Applications Motordrive Description TheSTGD3HF60HDisbasedonanewadvanced planartechnologyconcepttoyieldanIGBTwith morestableswitchingperformance(Eoff)v

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD3HF60HDT4

4.5 A, 600 V very fast IGBT with Ultrafast diode

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD3HF60HDT4

4.5 A, 600 V very fast IGBT with Ultrafast diode

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    STGD3HF60HDT4

  • 功能描述:

    IGBT 晶體管 4.5 A 600V IGBT 20V VGE 25A IFSM

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
23+
TO-252
2669
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價
ST
23+
TO-252
20000
原裝正品!假一罰十!
詢價
ST
新批次
TO-252
3000
詢價
ST
TO-252
23+
3000
深圳現(xiàn)貨支持實單
詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
ST
23+
TO252
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
ST
20+
DPAK
4520
原裝正品現(xiàn)貨
詢價
ST
2021+
TO-252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
STM
21+
TO-252
936
原裝現(xiàn)貨假一賠十
詢價
STM
1809+
TO-252
3675
就找我吧!--邀您體驗愉快問購元件!
詢價
更多STGD3HF60HDT4供應(yīng)商 更新時間2024-12-28 8:12:00