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STGF7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGF7NC60HD

N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGF7NC60HD

包裝：卷帶（TR） 封裝/外殼：TO-220-3 整包 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 10A 25W TO220FP

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GB7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GF7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GP7NC60H

N-channelPowerMESH?600V,14AveryfastIGBT

Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features ?Lowon-vo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

GP7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGB7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGB7NC60HD

N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGD7NC60H

N-CHANNEL14A-600VTO-220/DPAKVeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGP7NC60H

N-channelPowerMESH?600V,14AveryfastIGBT

Description ThisdeviceisaveryfastIGBTdevelopedusing advancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thisdeviceiswell-suitedforresonant orsoft-switchingapplications. Features ?Lowon-vo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGP7NC60H

N-CHANNEL14A-600VTO-220/DPAKVeryFastPowerMESHIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGP7NC60HD

N-channel14A,600V,veryfastIGBTwithUltrafastdiode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

STGP7NC60HD

N-CHANNEL14A-600V-TO-220/TO-220FP/DPAKVeryFastPowerMESHIGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

TSM7NC60CF

Advancedplanarprocess

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    STGF7NC60HD

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列：

    PowerMESH?

  • 包裝：

    卷帶（TR）

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.5V @ 15V，7A

  • 開關(guān)能量：

    95μJ（開），115μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    18.5ns/72ns

  • 測試條件：

    390V，7A，10 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商器件封裝：

    TO-220FP

  • 描述：

    IGBT 600V 10A 25W TO220FP

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
23+
TO-220F
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
ST
16+/17+
TO220F
3500
原裝正品現(xiàn)貨供應(yīng)56
 詢價
ST
24+
N/P
16500
代理授權(quán)直銷,原裝現(xiàn)貨,假一罰十,長期穩(wěn)定供應(yīng)
 詢價
STM
21+
TO-220FP
2850
原裝正品 有掛有貨
 詢價
STM
11+
2850
TO-220FP
 詢價
ST
19+/20+
TO-220F
11158
詢價
ST/意法
2021+
TO220F
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ST
新批次
TO-220F
3000
詢價
ST
11+
TO220
4200
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨
 詢價
ST
24+
TO220ISOFULLPACK
8866
詢價
更多STGF7NC60HD供應(yīng)商 更新時間2024-10-22 17:10:00

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