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STB13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFH13N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFU13N60M2

N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimproved

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL13N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP13N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
原廠原封
36900
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST
22+
原廠原封
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
 詢價(jià)
ST
24+
NA
200000
原裝進(jìn)口正口,支持樣品
 詢價(jià)
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
13+
TO220
30
詢價(jià)
ST/意法
2022+
TO220
30
原廠原裝,假一罰十
 詢價(jià)
ST/意法
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
ST/意法
23+
TO252
28533
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價(jià)格美麗 假一罰十!
 詢價(jià)
更多STD13N60M2-CUTTAPE供應(yīng)商 更新時(shí)間2025-1-29 16:00:00

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