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STFI13N60M2

Low gate input resistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

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STB13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFH13N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFU13N60M2

N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandanimproved

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL13N60M2

Lowgateinputresistance

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP13N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STMicroelectronics
18+
NA
3222
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
ST原裝
22+23+
TO-262F
23918
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
ST原裝
24+
TO-262F
9860
一級(jí)代理
 詢價(jià)
STM
1809+
TO-262
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
22+
NA
455
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST/意法
23+
TO-262F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST
22+
TO2623
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST/意法
2022
TO-262F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
TH/韓國(guó)太虹
2048+
TO-262F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
ST
23+
TO-262F
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
更多STFI13N60M2供應(yīng)商 更新時(shí)間2025-1-30 14:15:00

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