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FQB6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI6N15

150VN-ChannelMOSFET

Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQP6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF6N15

150VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQU6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQU6N15

150VN-ChannelMOSFET

150VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD6N15

TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM

PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSp

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6N15

PowerFieldEffectTransistorDPAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD6N15I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD6N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NTD6N15

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

SSM6N15AFE

LoadSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

SSM6N15AFU

LoadSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

SSM6N15FE

HighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

SSM6N15FU

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

HighSpeedSwitchingApplications AnalogSwitchingApplications ?Smallpackage ?LowONresistance:Ron=4.0?(max)(@VGS=4V) :Ron=7.0?(max)(@VGS=2.5V)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

SSM6N15FU

DualN-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

UF6N15Z

6A,150VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細參數(shù)

  • 型號：

    SSM6N15AFE,LM

  • 功能描述：

    MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA/東芝
22+
SOT563
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
TOSHIBA/東芝
23+
SOT-563
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA/東芝
2022
SOT-563
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
TOSHIBA/東芝
2023+
SOT563
4475
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨
 詢價
Toshiba Semiconductor and Stor
2022+
ES6(1.6x1.6)
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
TOSHIBA/東芝
23+
NA/
7725
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價
TOSHIBA/東芝
22+
ES6
25000
只有原裝原裝,支持BOM配單
 詢價
TOSHIBA
2023+
SOT-563
3550
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價
TOSHIBA/東芝
24+
SOT563
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
TOSHIBA/東芝
2223+
SOT563
26800
只做原裝正品假一賠十為客戶做到零風(fēng)險
 詢價
更多SSM6N15AFE,LM供應(yīng)商 更新時間2025-1-14 13:28:00

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