零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SSM6N15FU | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HighSpeedSwitchingApplications AnalogSwitchingApplications ?Smallpackage ?LowONresistance:Ron=4.0?(max)(@VGS=4V) :Ron=7.0?(max)(@VGS=2.5V) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | |
SSM6N15FU | Dual N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
High Speed Switching Applications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
150VN-ChannelMOSFET Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
150VN-ChannelMOSFET Features ?6.4A,150V,RDS(on)=0.6?@VGS=10V ?Lowgatecharge(typical6.5nC) ?LowCrss(typical9.6pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability ?175°Cmaximumjunctiontemperaturerating | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6.4A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
150VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
150VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.2A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
150VN-ChannelMOSFET 150VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
TMOSPOWERFET6.0AMPERES150VOLTSRDS(on)=0.3OHM PowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisTMOSPowerFETisdesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSp | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerFieldEffectTransistorDPAKforSurfaceMount | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
LoadSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
LoadSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
HighSpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
詳細(xì)參數(shù)
- 型號(hào):
SSM6N15FU
- 制造商:
Toshiba America Electronic Components
- 功能描述:
TRANS MOSFET N/P-CH - Tape and Reel
- 制造商:
Toshiba
- 功能描述:
Tape & Reel
- 功能描述:
Trans MOSFET N-CH 30V 0.1A 6-Pin US T/R
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TOSHIBA/東芝 |
24+ |
US6 |
45000 |
熱賣優(yōu)勢現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
2016+ |
SOT363 |
37610 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
TOSHIBA |
24+ |
US6 |
44700 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TOSHIBA |
24+ |
SOT363 |
9860 |
全新原裝現(xiàn)貨/假一罰百! |
詢價(jià) | ||
TOSHBIA |
2019+ |
SOT363 |
36000 |
原盒原包裝 可BOM配套 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
SOT-363 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
TOSHIBA/東芝 |
2019+PB |
US6 |
44700 |
原裝正品 可含稅交易 |
詢價(jià) | ||
TOSHIBA/東芝 |
2021+ |
SOT-363 |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
TOSHIBA/東芝 |
24+ |
SOT-363 |
503209 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
SOT-363 |
30000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫存
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