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07N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

ISPD07N60S5

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISPP07N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB07N60S5

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SPB07N60S5

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB07N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB07N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD07N60S5

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-251andTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPDU07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N60S5

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP07N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP07N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPPBI07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    SPU07N60S5IN

  • 制造商:

    Infineon Technologies AG

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Infineon(英飛凌)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價(jià)
infineon technologies
23+
NA
25987
原裝現(xiàn)貨 庫存特價(jià)/長期供應(yīng)元器件代理經(jīng)銷
詢價(jià)
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON/英飛凌
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
INFINEON/英飛凌
2022
TO-251
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
INF/SIE
23+
TO
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INF/SIE
22+
TO
8000
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢
詢價(jià)
INFINEON/英飛凌
21+
TO-252
30000
只做正品原裝現(xiàn)貨
詢價(jià)
INF/SIE
23+
TO-251
10000
公司只做原裝正品
詢價(jià)
更多SPU07N60S5IN供應(yīng)商 更新時(shí)間2025-1-2 16:12:00