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SPP11N80C3

Cool MOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

Isc N-Channel MOSFET Transistor

?FEATURES ?Ultraloweffectivecapacitances ?Lowgatecharge ?Improvedtransconductance ?Lowgatedrivepowerloss ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP11N80C3

Cool MOS??Power Transistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_08

Cool MOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_05

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

11N80

11A,812VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

HFP11N80Z

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

詳細參數(shù)

  • 型號:

    SPP11N80C

  • 功能描述:

    MOSFET COOL MOS N-CH 800V 11A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
INF
24+
TO220
5649
100%原裝正品真實庫存,支持實單
詢價
INFINEON
24+
TO-220
15000
原裝正品現(xiàn)貨
詢價
INFINEON
24+
TO-220
10000
進口原裝現(xiàn)貨
詢價
infieon
18+
TO-220
2869
進口原裝優(yōu)勢供應(yīng)QQ3171516190
詢價
INFINEON
11+
TO-220
6000
原裝正品現(xiàn)貨
詢價
INFINEON
23+
TO-220F
65400
詢價
IR
2020+
TO-220
32000
原裝正品,誠信經(jīng)營。
詢價
INFINEON
24+
TO220
9800
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!
詢價
INFINEON/英飛凌
2021+
SMD
18078
原裝進口假一罰十
詢價
INFINEON
20+
TO-220
50000
詢價
更多SPP11N80C供應(yīng)商 更新時間2025-2-15 14:30:00