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SPP20N60C3

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP20N60C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60C3

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60C3_09

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

G20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

HGTG20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

Intersil

Intersil Corporation

HGTG20N60C3D

45A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderate

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG20N60C3R

40A,600V,RuggedUFSSeriesN-ChannelIGBTs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTP20N60C3

45A,600V,UFSSeriesN-ChannelIGBT

ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

Intersil

Intersil Corporation

HGTP20N60C3R

40A,600V,RuggedUFSSeriesN-ChannelIGBTs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

ISPP20N60C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPW20N60C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA20N60C3

iscN-ChannelMOSFETTransistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    SPP20N60C3

  • 功能描述：

    MOSFET COOL MOS N-CH 650V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
5000
詢價
INFINEON
24+
TO-220
15000
原裝正品現(xiàn)貨
 詢價
INFINEON/英飛凌
23+
TO220
16690
ADI原裝現(xiàn)貨歡迎查詢庫存變動長期可供應訂貨樣品現(xiàn)貨
 詢價
IR
2020+
TO-220
22000
全新原裝正品 現(xiàn)貨庫存 價格優(yōu)勢
 詢價
INFINEON/英飛凌
24+
TO-220
17560
原裝現(xiàn)貨假一賠百,熱賣現(xiàn)貨庫存
 詢價
INFINEON原裝正品
23+
TO-220
12500
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
INFINEON
14+
TO-220
9860
大量原裝進口現(xiàn)貨,一手貨源,一站式服務,可開17%增
 詢價
INFINEON
23+
TO-220
8000
原裝正品,假一罰十
 詢價
INFINEON
23+
TO-220
1896
公司優(yōu)勢庫存熱賣全新原裝!歡迎來電
 詢價
Infineon
18+
TO-220
2841
進口原裝優(yōu)勢供應QQ3171516190
 詢價
更多SPP20N60C3供應商 更新時間2024-10-24 15:55:00

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