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SPP11N80C3

Cool MOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

Isc N-Channel MOSFET Transistor

?FEATURES ?Ultraloweffectivecapacitances ?Lowgatecharge ?Improvedtransconductance ?Lowgatedrivepowerloss ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP11N80C3

Cool MOS??Power Transistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_08

Cool MOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP11N80C3_05

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW11N80C3

Newrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW11N80C3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPW11N80C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW11N80C3

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    SPP11N80C3

  • 功能描述：

    MOSFET COOL MOS N-CH 800V 11A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
INF
24+
TO220
5649
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INFINEON
24+
TO-220
15000
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INFINEON
24+
TO-220
10000
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infieon
18+
TO-220
2869
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INFINEON
11+
TO-220
6000
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INFINEON
23+
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65400
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IR
2020+
TO-220
32000
原裝正品,誠信經(jīng)營。
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INFINEON
24+
TO220
9800
一級代理/全新原裝現(xiàn)貨/長期供應(yīng)!
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INFINEON/英飛凌
2021+
SMD
18078
原裝進(jìn)口假一罰十
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INFINEON
20+
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50000
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更多SPP11N80C3供應(yīng)商 更新時(shí)間2024-12-27 14:30:00

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