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RMQCEA3636DGBA

36-Mbit DDR? II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA_15

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA-182#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA-202#AC0

36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCLA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
RENESAS
1923+
NA
6900
只做進(jìn)口原裝假一罰十品質(zhì)決定一切價(jià)格優(yōu)惠
 詢價(jià)
RENESAS/瑞薩
21+
BGA
1574
詢價(jià)
RENESAS/瑞薩
BGA
145
原裝現(xiàn)貨
 詢價(jià)
DBLECTRO
23+
原廠原包
29960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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亞成微
23+
TOLL
7500
亞成微全系列在售
 詢價(jià)
TOS
24+
SOT-123
9000
詢價(jià)
reso
420
公司優(yōu)勢(shì)庫存 熱賣中!
 詢價(jià)
RESON
23+
6540
只做原裝正品現(xiàn)貨或者訂貨假一賠十!
 詢價(jià)
更多RMQCEA3636DGBA供應(yīng)商 更新時(shí)間2025-3-10 14:30:00

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