RMQSDA3636DGBA

36-Mbit QDR? II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RMQSDA3636DGBA_15

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

RMQSDA3636DGBA-182#AC0

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

RMQSDA3636DGBA-202#AC0

36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT

3636

RAST-5-Steckverbinder,Raster5,0mm

3636

RAST5connectors,pitch5.0mm

3636

TensionWireClips-Nylon

3636NF

Sealedtoggleswitchesforoutdoorapplications

APS3636VR

3600WPowerVerterAPS36VDC120VInverter/ChargerwithAuto-TransferSwitching

APSINT3636VR

PowerVerterAPSINT3600W36VDC230V