首頁 >RMQSAA3618DGBA>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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RMQSAA3618DGBA | 36-Mbit QDR? II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ADAPTADORDEENCAPSULADOTSOP56ADIP56PINES Descripción EnplasIC&Burn-inSocket,paraencapsulados:TSOP56 | AGELECTRONICA AG Electronica | AGELECTRONICA | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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DBLECTRO |
23+ |
原廠原包 |
29960 |
只做進口原裝 終端工廠免費送樣 |
詢價 | ||
亞成微 |
23+ |
TOLL |
7500 |
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TOS |
24+ |
SOT-123 |
9000 |
詢價 | |||
reso |
420 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | ||||
RESON |
23+ |
6540 |
只做原裝正品現(xiàn)貨或者訂貨假一賠十! |
詢價 |
相關(guān)規(guī)格書
更多- RMQSAA3618DGBA-182#AC0
- RMQSAA3618DGBA-202#AC0
- RMQSAA3636DGBA_15
- RMQSAA3636DGBA-202#AC0
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相關(guān)庫存
更多- RMQSAA3618DGBA-202#AC0
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